Germany - The subject of the order is an ICP-RIE plasma etching system for the structuring of micro
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Details
Provided by
- Opportunity closing date
- 09 January 2025
- Opportunity publication date
- 03 December 2024
- Value of contract
- to be confirmed
- Your guide to exporting
Description
The subject of the order is an ICP-RIE plasma etching system for structuring micro- and nano-optical elements, specifically proportional and binary plasma etching in dielectric, semiconducting materials and functional layers (fused silica, silicon, SiOxNy, silicon carbide, highly refractive materials such as Ta2O5, Nb2O5, etc.) using fluorine-based reactive gas processes, also at, but not exclusively, cryogenic temperatures around -130°C. The system with loadlock (LL) must enable the processing of variable substrate sizes using carriers without major processing and time expenditure. A fast, variable change of substrate electrode cooling between cooling by means of a cryogenic thermostat and liquid nitrogen is desirable. At the very least, however, it must be possible to switch to liquid nitrogen cooling at a later date without any structural changes to the substrate electrode. For further information, see Appendix 2.
- Opportunity closing date
- 09 January 2025
- Value of contract
- to be confirmed
About the buyer
- Address
- Friedrich-Schiller-Universität Jena
Bid for tender
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